PART |
Description |
Maker |
Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
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http:// SIEMENS A G SIEMENS AG
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HYB314171BJ-50- HYB314171BJL-50 HYB314171BJL-70 HY |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
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http:// SIEMENS A G SIEMENS AG
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HYB514256BJL-70 HYB514256BJL-60 HYB514256BJL-50 HY |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
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SIEMENS[Siemens Semiconductor Group] Infineon
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KM44C256B KM44C256B-7 KM44C256B-8 KM44C256B-10 |
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
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SAMSUNG SEMICONDUCTOR CO. LTD.
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KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
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Samsung Electronics Samsung Semiconductor Co., Ltd.
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HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷 1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模) 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
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Siemens Semiconductor Group SIEMENS AG
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NM93C06EM8 NM93C06EMT8 NM93C06EN NM93CS06EMT8 NM93 |
256-Bit Serial CMOS EEPROM (MICROWIRE?/a> Synchronous Bus) The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 Card Edge Connector; No. of Contacts:40; Pitch Spacing:0.1" RoHS Compliant: Yes 256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus) 256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS) 256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus) 256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
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Fairchild Semiconductor, Corp. EEPROM Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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NN514256AT-40 NN514256AT-45 NN514256 NN514256A NN5 |
RESISTOR-METAL FILM 的CMOS 256 × 4位动态随机存储器 CMOS 256K x 4bit Dynamic RAM 的CMOS 256 × 4位动态随机存储器 RES, 11.0 OHM 63MW 75V 1% 100PPM CHIP, 0603
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http:// Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
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MH16S64PHB-6 B99031 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM From old datasheet system 1073741824-BIT ( 16777216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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HYB5117800BSJ-50- Q67100-Q1092 Q67100-Q1093 HYB311 |
2M x 8 - Bit Dynamic RAM 2k Refresh 2M×8-Bit Dynamic RAM (Fast Page Mode)(2M×8动态RAM(快速页面模)
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SIEMENS AG SIEMENS A G
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AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 A |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash MemoryDie Revision 1 PCB COPPER CLAD 6X9 1/32 2-SIDE DIN Audio Connector; Number of Contacts:5; Contact Termination:Solder; Mounting Type:Panel; Gender:Receptacle; Contact Plating:Silver; Series:C091A 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 256K X 8 FLASH 5V PROM, 90 ns, UUC42 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修 M39012 MIL RF CONNECTOR 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修
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AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
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Samsung Electronics Samsung semiconductor
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